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irfr3504zpbf irfu3504zpbf hexfet ? power mosfet v dss = 40v r ds(on) = 9.0m ? i d = 42a www.kersemi.com 1 automotive mosfet pd - 95521a specifically designed for automotive applications, this hexfet ? power mosfet utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. additional features of this design are a 175c junction operating tempera- ture, fast switching speed and improved repetitive avalanche rating . these features combine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications. s d g description advanced process technology ultra low on-resistance 175c operating temperature fast switching repetitive avalanche allowed up to tjmax lead-free features d-pak irfr3504z i-pak irfu3504z absolute maximum ratings parameter units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 100c continuous drain current, v gs @ 10v a i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as (thermally limited) single pulse avalanche energy mj e as (tested ) single pulse avalanche energy tested value i ar avalanche current a e ar repetitive avalanche energy mj t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds mounting torque, 6-32 or m3 screw thermal resistance parameter typ. max. units r jc junction-to-case ??? 1.66 r ja junction-to-ambient (pcb mount) ??? 40 c/w r ja junction-to-ambient ??? 110 110 77 see fig.12a, 12b, 15, 16 90 0.60 20 max. 77 54 310 42 -55 to + 175 300 (1.6mm from case ) 10 lbf in (1.1n m)

2 www.kersemi.com s d g electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 40 ??? ??? v ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.032 ??? v/c r ds(on) static drain-to-source on-resistance ??? 8.23 9.0 m ? v gs(th) gate threshold voltage 2.0 ??? 4.0 v gfs forward transconductance 32 ??? ??? s i dss drain-to-source leakage current ??? ??? 20 a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 200 na gate-to-source reverse leakage ??? ??? -200 q g total gate charge ??? 30 45 q gs gate-to-source charge ??? 9.6 ??? nc q gd gate-to-drain ("miller") charge ??? 12 ??? t d(on) turn-on delay time ??? 15 ??? t r rise time ???74??? t d(off) turn-off delay time ??? 30 ??? ns t f fall time ???38??? l d internal drain inductance ??? 4.5 ??? between lead, nh 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from package and center of die contact c iss input capacitance ??? 1510 ??? c oss output capacitance ??? 340 ??? c rss reverse transfer capacitance ??? 190 ??? pf c oss output capacitance ??? 1100 ??? c oss output capacitance ??? 340 ??? c oss eff. effective output capacitance ??? 460 ??? source-drain ratings and characteristics parameter min. typ. max. units i s continuous source current ??? ??? 42 (body diode) a i sm pulsed source current ??? ??? 310 (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 18 27 ns q rr reverse recovery charge ??? 9.2 14 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) v gs = 0v, v ds = 1.0v, ? = 1.0mh z v gs = 0v, v ds = 32v, ? = 1.0mh z v gs = 0v, v ds = 0v to 32v v gs = 10v v dd = 20v i d = 42a r g = 15 ? t j = 25c, i s = 42a, v gs = 0v t j = 25c, i f = 42a, v dd = 20v di/dt = 100a/s conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 42a v ds = v gs , i d = 250a v ds = 40v, v gs = 0v v ds = 40v, v gs = 0v, t j = 125c mosfet symbol showing the integral reverse p-n junction diode. v ds = 10v, i d = 42a i d = 42a v ds = 32v conditions v gs = 10v v gs = 0v v ds = 25v ? = 1.0mhz v gs = 20v v gs = -20v

www.kersemi.com 3 fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. typical forward transconductance vs. drain current 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 30s pulse width tj = 175c 4.5v vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 4.0 5.0 6.0 7.0 8.0 9.0 10.0 v gs , gate-to-source voltage (v) 0.1 1.0 10.0 100.0 1000.0 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) v ds = 20v 30s pulse width t j = 25c t j = 175c 0 1020304050 i d, drain-to-source current (a) 0 10 20 30 40 50 60 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = 10v 380s pulse width 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 30s pulse width tj = 25c 4.5v vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v

4 www.kersemi.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 0 500 1000 1500 2000 2500 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 1020304050 q g total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 32v vds= 20v vds= 8.0v i d = 42a for test circuit see figure 13 0.2 0.6 1.0 1.4 1.8 2.2 v sd , source-todrain voltage (v) 0.1 1.0 10.0 100.0 1000.0 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 0 1 10 100 1000 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec

www.kersemi.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10. normalized on-resistance vs. temperature 25 50 75 100 125 150 175 t c , case temperature (c) 0 20 40 60 80 i d , d r a i n c u r r e n t ( a ) limited by package -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 42a v gs = 10v 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 1.117 0.000536 0.5422 0.004428 j j 1 1 2 2 r 1 r 1 r 2 r 2 c ci= i / ri ci= i / ri

6 www.kersemi.com q g q gs q gd v g charge fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 14. threshold voltage vs. temperature r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 40 80 120 160 200 240 280 320 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 5.0a 6.4a bottom 42a -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 2.0 2.5 3.0 3.5 4.0 4.5 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a 1k vc c dut 0 l

www.kersemi.com 7 fig 15. typical avalanche current vs.pulsewidth fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ' t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav assuming ' tj = 25c due to avalanche losses. note: in no case should tj be allowed to exceed tjmax 0.01 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 20 40 60 80 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1% duty cycle i d = 42a

8 www.kersemi.com fig 17.

for n-channel hexfet power mosfets
?
? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period

+ - + + + - - - ?
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# $$ ? !"!!%" v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f &' 1 (
# 0.1 % + - fig 18a. switching time test circuit fig 18b. switching time waveforms

www.kersemi.com 9

12 in the assembly line "a" as s embled on ww 16, 1999 example: with assembly this is an irfr120 lot code 1234 year 9 = 199 9 dat e code we e k 1 6 part number logo international rect ifier assembly lot code 916a irfu120 34 year 9 = 1999 dat e code or p = designates lead-free product (optional) note: "p" in as sembly line position i ndi cates " l ead- f r ee" 12 34 we e k 16 a = assembly site code part number irf u120 line a logo lot code as s e mb l y int ernational rectifier

10 www.kersemi.com

as s e mb l y example: with assembly this is an irfu120 ye ar 9 = 199 9 dat e code line a week 19 in the as sembly line "a" as s emble d on ww 19, 1999 lot code 5678 part number 56 irf u120 international logo rectifier lot code 919a 78 note: "p" in as s embly line pos ition indicates "l ead-f ree" 56 78 assembly lot code rect ifier logo international irf u 120 part number we ek 19 dat e code ye ar 9 = 1999 a = assembly site code p = designates lead-free product (opt ional)

www.kersemi.com 11 repetitive rating; pulse width limited by max. junction temperature. (see fig. 11). limited by t jmax , starting t j = 25c, l = 0.09mh r g = 25 ? , i as = 42a, v gs =10v. part not recommended for use above this value. pulse width 1.0ms; duty cycle 2%.
c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . limited by t jmax , see fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. this value determined from sample failure population. 100% tested to this value in production. when mounted on 1" square pcb (fr-4 or g-10 material) . for recommended footprint and soldering techniques refer to application note #an-994

tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl n otes : 1 . controlling dimension : millimeter. 2 . all dimensions are shown in millimeters ( inches ). 3 . outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch

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